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Valley-Chiral Edge States of Antisymmetric Plate Wave in Phononic Crystals with Linear Defect
Acta Mechanica Solida Sinica ( IF 2.2 ) Pub Date : 2021-07-18 , DOI: 10.1007/s10338-021-00252-w
Jinfeng Zhao 1 , Weitao Yuan 1 , Fan Yang 1 , Zheng Zhong 1, 2
Affiliation  

In this work, two typical interfaces are established for the antisymmetric plate wave by introducing linear defect in between phononic crystals with opposite valley Hall phases. The evolution of projected curves is demonstrated as the defect width increases, which magnifies the occurrence of multiple edge states on both interfaces. The mapping of transmission coefficient is obtained upon the incidence of transversely symmetric and antisymmetric sources, respectively. It is shown that the first edge state contains only symmetric or antisymmetric component regardless the defect width modulation, while other edge states contain both components. When void cavity occurs on the interfaces, the mapping of transmission coefficient shows that the first edge state is topologically protected and its transverse symmetry or antisymmetry is almost unperturbed by the void cavity, while other edge states do not perform the same way. Our work provides useful guidance for the design of topological edge states, and bridges the topological edge states and linear defect modes on the same interface.



中文翻译:

具有线缺陷的声子晶体反对称板波的谷手性边缘态

在这项工作中,通过在具有相反谷霍尔相位的声子晶体之间引入线性缺陷,为反对称板波建立了两个典型的界面。随着缺陷宽度的增加,投影曲线的演变被证明,这放大了两个界面上多个边缘状态的发生。透射系数的映射分别根据横向对称和反对称源的入射获得。结果表明,无论缺陷宽度调制如何,第一边缘状态仅包含对称或反对称分量,而其他边缘状态包含这两种分量。当界面上出现空洞时,透射系数的映射表明,第一边缘态受到拓扑保护,其横向对称性或反对称性几乎不受空腔的干扰,而其他边缘态的表现并不相同。我们的工作为拓扑边缘态的设计提供了有用的指导,并在同一界面上桥接了拓扑边缘态和线性缺陷模式。

更新日期:2021-07-19
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