The Schottky barrier diodes were fabricated from a bulk Sn-doped (001) n-type Ga₂O₃ substrate with a Si-doped epitaxial layer grown by hydride vapor phase epitaxy (HVPE), which demonstrate a good response to X-rays. Circular metal contacts with diameters ranging from 50 to $1500\mathrm{\mu }\mathrm{m}$ and square metal contacts ranging from $100\times 100\mathrm{\mu }\mathrm{m}$² to $1600\times 1600\mathrm{\mu }\mathrm{m}$² were deposited on the wafer. The devices were characterized for their electrical performance including forward current–voltage (FIV), reverse current–voltage (RIV), and capacitance–voltage (CV) measurements. The best device showed a breakdown voltage of −804 V and the devices tested had an average ideality of 1.12. The devices exhibited a clear response to X-rays even at zero bias with an experimentally observed response time $\sim$1.03 s and a linear response of detector signal to the X-ray dose rate. The experimentally observed device response time improved to $\sim$0.25 s when bias voltage is applied. The device also survived a long-term stability test of over 2 h under a constant X-ray irradiation. The sensitivity and the lower limit of detection for X-ray by Ga₂O₃ epitaxial Schottky detectors were discussed and determined as 43.5 $\mathrm{\mu }$C/mGy cm⁻² at −200 V and 8.31 nGy${}_{\mathrm{Air}}$/s, respectively.

肖特基势垒二极管由块体 Sn 掺杂 (001) n 型 Ga ₂ O ₃衬底制成，该衬底具有通过氢化物气相外延 (HVPE)生长的 Si 掺杂外延层，其表现出对 X 射线的良好响应。直径范围从 50 到$1500\mathrm{\mu }\mathrm{米}$ 和方形金属触点，范围从 $100\times 100\mathrm{\mu }\mathrm{米}$²到$1600\times 1600\mathrm{\mu }\mathrm{米}$²沉积在晶片上。这些器件的电气性能包括正向电流-电压 (FIV)、反向电流-电压 (RIV) 和电容-电压 (CV) 测量。最佳器件的击穿电压为 -804 V，测试的器件的平均理想值为 1.12。即使在零偏压下，设备也对 X 射线表现出清晰的响应，并具有实验观察到的响应时间$～$1.03 s 和探测器信号对 X 射线剂量率的线性响应。实验观察到的设备响应时间提高到$～$施加偏置电压时为 0.25 秒。该设备还在恒定 X 射线照射下经受了超过 2 小时的长期稳定性测试。讨论了Ga ₂ O ₃外延肖特基探测器对X射线的灵敏度和探测下限，确定为43.5$\mathrm{\mu }$C/mGy cm ^-2在 -200 V 和 8.31 nGy${}_{\mathrm{空气}}$/s，分别。