Abstract—

Surface modification of GaAs in sulfur vapor by different procedures and subsequent annealing and thermal oxidation have an advantageous effect on the properties of heterostructures, ensuring binding of the constituent components of the substrate and the formation of films with a uniform surface, without well-defined defects. The approaches proposed in this work allow films of nanometer thickness with resistivity from ~10⁸ to ~10¹⁰ Ω cm to be grown on the surface of GaAs by a simple method.

中文翻译：

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硫蒸气处理单晶砷化镓表面的热氧化

摘要-

通过不同的程序和随后的退火和热氧化对硫蒸气中的 GaAs 进行表面改性，对异质结构的性质有有利影响，确保基板组成成分的结合和形成具有均匀表面的薄膜，没有明确定义的缺陷. 在这项工作中提出的方法允许通过简单的方法在 GaAs 表面上生长具有~10 ⁸到~10 ¹⁰ Ω cm电阻率的纳米厚度薄膜。