The inter-wall coupling mechanism is studied by comparing the group-III doped on the inner and outer walls of DWSiCNTs and SWSiCNTs differs in band structure and optical properties. For DWSiCNTs, B and Ga atoms doping the outer wall is easier to dope, while Al and In doping the inner wall is easier to achieve. DWSiCNTs doped with group-III atoms enhances the inter-wall coupling, and the coupling effect of the inner wall doped DWSiCNTs is stronger than that of the outer wall doped. The inner wall doping has a more obvious regulatory effect on the inter-wall coupling of DWSiCNTs. The absorption and photoconductivity show that in the visible and ultraviolet bands, the intrinsic conductivity peaks of DWSiCNTs are larger and wider. This is because the coupling effect increases the electron transition probability of doped DWSiCNTs, making the carrier concentration greater than SWSiCNTs, and the minority carrier lifetime is longer.

通过比较掺杂在DWSiCNTs内壁和外壁的III族与SWSiCNTs在能带结构和光学性质上的差异，研究了壁间耦合机制。对于 DWSiCNTs，B 和 Ga 原子掺杂外壁更容易掺杂，而 Al 和 In 掺杂内壁更容易实现。掺杂III族原子的DWSiCNTs增强了壁间耦合，内壁掺杂的DWSiCNTs的耦合作用强于外壁掺杂的DWSiCNTs。内壁掺杂对DWSiCNTs的壁间耦合有更明显的调节作用。吸收和光电导率表明，在可见光和紫外波段，DWSiCNTs的本征电导峰更大更宽。这是因为耦合效应增加了掺杂 DWSiCNTs 的电子跃迁概率，