In this paper, we investigate the impact of ultraviolet (UV) exposure on the bulk etch rate (V${}_b$), track etch rate (V${}_t$), and detector sensitivity of a CR-39 nuclear track detector. The study involves measuring the depths and diameters of alpha particle tracks in the CR-39 detector. The detectors were irradiated with alpha-particles with energy of 3.5 MeV after/or before being exposed to UV radiation at 366 nm for 6 h. The detectors were etched in a 6.25 N NaOH solution at 70 °C for periods of 1–7 h. The results showed that both V${}_b$ and V${}_t$ for CR-39 exhibited an enhancement when exposed to UV, where, the alpha-particle track diameters and depths increased with UV exposure. Moreover, the study revealed that the track formation time is decreased when the CR-39 detector was irradiated with UV light.

在本文中，我们研究了紫外线 (UV) 曝光对体蚀刻速率 (V${}_{乙}$), 轨迹蚀刻速率 (V${}_{吨}$)，以及 CR-39 核径迹探测器的探测器灵敏度。该研究涉及测量 CR-39 探测器中阿尔法粒子轨迹的深度和直径。在暴露于 366 nm 的紫外线辐射之后/或之前，用能量为 3.5 MeV 的 α 粒子照射检测器 6 小时。探测器在 6.25 N NaOH 溶液中于 70 °C 蚀刻 1-7 小时。结果表明，V${}_{乙}$ 和 V${}_{吨}$对于 CR-39，当暴露在紫外线下时表现出增强，其中，α 粒子轨道直径和深度随着紫外线照射而增加。此外，研究表明，当用紫外线照射 CR-39 探测器时，轨迹形成时间会减少。