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Integrated complementary inverters and ring oscillators based on vertical-channel dual-base organic thin-film transistors
Nature Electronics ( IF 34.3 ) Pub Date : 2021-07-15 , DOI: 10.1038/s41928-021-00613-w
Erjuan Guo 1 , Shen Xing 1 , Felix Dollinger 1 , Shu-Jen Wang 1 , Zhongbin Wu 1, 2 , Karl Leo 1 , Hans Kleemann 1 , René Hübner 3
Affiliation  

Lateral-channel dual-gate organic thin-film transistors have been used in pseudo complementary metal–oxide–semiconductor (CMOS) inverters to control switching voltage. However, their relatively long channel lengths, combined with the low charge carrier mobility of organic semiconductors, typically leads to slow inverter operation. Vertical-channel dual-gate organic thin-film transistors are a promising alternative because of their short channel lengths, but the lack of appropriate p- and n-type devices has limited the development of complementary inverter circuits. Here, we show that organic vertical n-channel permeable single- and dual-base transistors, and vertical p-channel permeable base transistors can be used to create integrated complementary inverters and ring oscillators. The vertical dual-base transistors enable switching voltage shift and gain enhancement. The inverters exhibit small switching time constants at 10 MHz, and the seven-stage complementary ring oscillators exhibit short signal propagation delays of 11 ns per stage at a supply voltage of 4 V.



中文翻译:

基于垂直通道双基极有机薄膜晶体管的集成互补反相器和环形振荡器

横向沟道双栅有机薄膜晶体管已被用于伪互补金属氧化物半导体 (CMOS) 逆变器来控制开关电压。然而,它们相对较长的沟道长度,加上有机半导体的低电荷载流子迁移率,通常会导致逆变器运行缓慢。垂直沟道双栅有机薄膜晶体管因其短沟道长度而成为一种很有前景的替代品,但缺乏合适的 p 型和 n 型器件限制了互补反相器电路的发展。在这里,我们展示了有机垂直 n 沟道可渗透单基极和双基极晶体管以及垂直 p 沟道可渗透基极晶体管可用于创建集成互补反相器和环形振荡器。垂直双基极晶体管可实现开关电压偏移和增益增强。逆变器在 10 MHz 时具有较小的开关时间常数,七级互补环形振荡器在 4 V 电源电压下每级具有 11 ns 的短信号传播延迟。

更新日期:2021-07-15
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