Hydrogenated amorphous carbon (a-C:H) films were deposited using inductively coupled C₂H₂ plasma, and the effect of process parameters on the sp²/sp³ hybridization ratio of the films was investigated. The sp²/sp³ ratio was deduced from the intensity ratios of the D and G peaks (I_D/I_G) observed in Raman spectra. The ion density in the C₂H₂ plasma was determined using an ion probe, and the relative density of CH and H radicals was quantified using optical actinometry. A high I_D/I_G ratio was observed at high substrate temperatures, and the high sp²/sp³ ratio is attributed to the loss of hydrogen atoms at high temperatures. A high I_D/I_G ratio was also observed with high plasma power and low pressure. The I_D/I_G ratio of the a-C:H films increased with increasing ion density in the C₂H₂ plasmas generated under various conditions, but decreased with the relative density of CH radicals. Ions remove hydrogen atoms from a-C:H films, and CH radicals introduce hydrogen atoms into a-C:H films. The etching resistance of a-C:H films was also investigated, wherein the etch rates of the a-C:H films decreased by 83.3% in the CF₄ plasma and by 70.2% in the O₂ plasma when the sp²/sp³ ratio was increased from 0.97 to 1.62.

使用电感耦合C ₂ H ₂等离子体沉积氢化非晶碳(aC:H)薄膜，并研究工艺参数对薄膜sp ² /sp ³杂化比的影响。sp ² /sp ³比值是从拉曼光谱中观察到的 D 和 G 峰的强度比 ( I _D /I _G )推导出来的。C ₂ H ₂等离子体中的离子密度使用离子探针测定，CH 和H 自由基的相对密度使用光学光度计定量。高I _D / I _Gsp ² /sp ³比值高是由于在高温下氢原子的损失。在高等离子体功率和低压力下也观察到高I _D /I _G比。aC:H 薄膜的I _D /I _G比随着 C ₂ H _{2 中}离子密度的增加而增加等离子体在各种条件下产生，但随着 CH 自由基的相对密度而减少。离子从 aC:H 薄膜中去除氢原子，而 CH 自由基将氢原子引入 aC:H 薄膜。还研究了 aC:H 薄膜的耐蚀刻性，其中当 sp ² /sp ³比值增加时，aC:H 薄膜的蚀刻速率在 CF ₄等离子体中下降了 83.3%，在 O ₂等离子体中下降了 70.2%从 0.97 到 1.62。