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Characterization of Dy2S3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method
Solid State Sciences ( IF 3.5 ) Pub Date : 2021-07-16 , DOI: 10.1016/j.solidstatesciences.2021.106693
P.P. Bagwade , D.B. Malavekar , S.B. Ubale , T.T. Ghogare , R.N. Bulakhe , I. In , U.M. Patil , C.D. Lokhande

The successive ionic layer adsorption and reaction (SILAR) method was used for the deposition of dysprosium sulfide (Dy2S3) thin films on stainless steel (SS) substrate. The X-ray diffraction (XRD) study showed orthorhombic crystal structure of Dy2S3. Scanning electron microscopic study revealed microstructure with randomly distributed spherical nanostructured particles. The films exhibited hydrophilic nature with a contact angle of 50° and a specific surface area of 48 m2g-1. The electrochemical properties of Dy2S3 films in 1 M Na2SO4 electrolyte displayed maximum specific capacitance (Cs) of 273 F g−1 at a scan rate of 5 mVs−1.



中文翻译:

通过连续离子层吸附和反应 (SILAR) 方法沉积的 Dy2S3 薄膜的表征

连续离子层吸附和反应(SILAR)方法用于在不锈钢(SS)基材上沉积硫化镝(Dy 2 S 3)薄膜。X射线衍射(XRD)研究显示Dy 2 S 3 的正交晶体结构。扫描电子显微镜研究揭示了具有随机分布的球形纳米结构颗粒的微观结构。该薄膜表现出亲水性,接触角为50°,比表面积为48 m 2 g -1。Dy 2 S 3薄膜在1 M Na 2 SO 4 中的电化学性能电解质 在5 mVs -1的扫描速率下显示出273 F g -1 的最大比电容( C s ) 。

更新日期:2021-07-25
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