Abstract

Molecular layer deposition (MLD) of thin polyamide films was performed using 1,3,5-benzenetricarbonyltrichloride (trimesoyl chloride, TMC) and 1,2-ethylenediamine (EDA) as precursors at a temperature of 120°С. The growth rate at this temperature was 1.85 nm/cycle. In situ quartz crystal microbalance (QCM) study was used to determine the film growth behavior. QCM signal showed linear film growth with an increasing number of MLD cycles. Pyrolysis of MLD polyamide films on Si(111) was conducted at temperatures of 1100 and 1300°С and a pressure of 10⁻⁷ Torr. Thin heteroepitaxial films of β-SiC (3C–SiC) on the Si(111) were obtained as a result of a solid-phase reaction between Si and C at 1300°С. A variety of high-resolution spectroscopic techniques were used to determine the elemental composition and crystal structure of organic and ceramic films.

中文翻译：

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Si(111)上聚酰胺薄膜的分子层沉积和热解与β-SiC的形成

摘要

使用 1,3,5-苯三羰基三氯化物（均苯三甲酰氯，TMC）和 1,2-乙二胺 (EDA) 作为前体，在 120°С 的温度下进行聚酰胺薄膜的分子层沉积 (MLD)。在此温度下的生长速率为 1.85 nm/周期。原位石英晶体微量天平 (QCM) 研究用于确定薄膜生长行为。QCM 信号显示随着 MLD 循环次数的增加线性薄膜生长。在 1100 和 1300°С 的温度和 10 ^-7的压力下对 Si(111) 上的 MLD 聚酰胺薄膜进行热解 托。由于 Si 和 C 在 1300°С 发生固相反应，在 Si（111）上获得了薄的 β-SiC（3C-SiC）异质外延膜。使用各种高分辨率光谱技术来确定有机和陶瓷薄膜的元素组成和晶体结构。