Nanoindentation is a well-known technique to assess the mechanical properties of bulk materials and films. Despite that, nanoindentation of thin films is not straightforward, given that the measured properties are composite information from a film/substrate system and depend on the indentation depth. By using dynamic indentation experiments and analytical or empirical models, we assessed the intrinsic film properties of chemical vapor deposited silicon oxide (SiO_x) and silicon oxycarbide (SiO_xC_y) thin films with thicknesses ranging from 60 to 700 nm. In this work, the Bec rheological model and several mixing laws were reviewed. Measured Young modulus appeared to be affected by the substrate properties more than hardness: for the thinnest films, moduli were measured at ca. 90 GPa whereas intrinsic moduli were calculated at ca. 50 GPa. Using calculated intrinsic film modulus and hardness, it was possible to establish correlations between these properties, the chemical composition and the structural organization of the films.

纳米压痕是一种众所周知的技术，用于评估散装材料和薄膜的机械性能。尽管如此，薄膜的纳米压痕并不简单，因为测量的特性是来自薄膜/基材系统的复合信息，并且取决于压痕深度。通过使用动态压痕实验和分析或经验模型，我们评估了化学气相沉积氧化硅 (SiO _x ) 和碳氧化硅 (SiO _x C _y) 厚度范围为 60 至 700 nm 的薄膜。在这项工作中，回顾了 Bec 流变模型和几个混合定律。测得的杨氏模量似乎受基材性质的影响大于硬度：对于最薄的薄膜，模量在约 90 GPa 而固有模量是在大约计算的。50 吉帕。使用计算的固有膜模量和硬度，可以在这些特性、化学成分和膜的结构组织之间建立相关性。