This paper focuses on testing the reliability of a Strained Superjunction Vertical Single diffused MOS (s-SJVSDMOS) at high-temperature. It provides an in-depth study of the device behavior at high-temperatures specifically at 300, 350 and 400 K. The s-SJVSDMOS is simulated in 2D T-CAD simulator and the outcomes are extracted. The variation of the extracted parameters with temperature is explored. The electrical and channel characteristics of the device are analyzed here. From the discussion, it was deduced that at high-temperature the device exhibits analogous characteristics as at room-temperature condition.

中文翻译：

---

应变超结垂直单扩散MOSFET的高温分析

本文重点测试应变超结垂直单扩散 MOS (s-SJVSDMOS) 在高温下的可靠性。它对器件在高温下的行为进行了深入研究，特别是在 300、350 和 400 K 下。在 2D T-CAD 模拟器中模拟了 s-SJVSDMOS，并提取了结果。探讨了提取参数随温度的变化。这里分析了器件的电气和通道特性。从讨论中可以推断，该器件在高温下表现出与室温条件下相似的特性。