Abstract

In this paper, we consider synthetic antiferromagnetic (SAF) structures and their influence in a fixed layer of a spin-tunnel junction on the magnitude of the magnetoresistive effect and temperature stability. The SAF structure consists of two ferromagnetic (FM) layers, between which a nonmagnetic film is located. The ion exchange interaction of two FM layers has an oscillating character and depends on the nonmagnetic layer thickness and the surface roughness of the FM layers. The mechanism of SAF magnetization reversal with fixation by an antiferromagnetic layer and in its absence, as well as the effect of the sequence of deposition of layers in the SAF structure on its properties, are considered. The main applications of SAF structures as a part of spintronic devices is described.

中文翻译：

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自旋电子器件技术中的合成反铁磁结构

摘要

在本文中，我们考虑了合成反铁磁 (SAF) 结构及其在自旋隧道结的固定层中对磁阻效应和温度稳定性大小的影响。SAF 结构由两个铁磁 (FM) 层组成，非磁性薄膜位于这两个铁磁层之间。两个 FM 层的离子交换相互作用具有振荡特性，取决于非磁性层厚度和 FM 层的表面粗糙度。考虑了通过反铁磁层固定和不存在时 SAF 磁化反转的机制，以及 SAF 结构中层的沉积顺序对其性能的影响。描述了 SAF 结构作为自旋电子器件的一部分的主要应用。