This work studies the lattice-matched AlInN/GaN high-electron mobility transistor (HEMT) with BGaN buffer in drain-current (DC) and radio-frequency (RF) characteristics in theory. The results demonstrate that the BGaN buffer can effectively confine two-dimensional electron gas (2DEG) in the channel area and significantly improve the pinch-off velocity of devices. Compared with the standard GaN buffer HEMT as a reference, the BGaN buffer HEMT with only 1.5% B-component significantly suppressed the short-channel effects (SCEs). And the subthreshold swing (SS) and drain-induced barrier lower (DIBL) are reduced to 124 mV/dec and 77 mV/V, respectively. The threshold voltage of the proposed HEMT is about −3.61 eV, which positive shifts about 2.45 eV compared with the reference HEMT, and this mainly due to the reduction of 2DEG density. In addition, the peak current gain cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed HEMT are 155 GHz and 174 GHz, respectively. And this is slightly lower than that of the reference device, which mainly results from the lower transconductance and 2DEG density.

这项工作从理论上研究了晶格匹配的 AlInN/GaN 高电子迁移率晶体管 (HEMT) 和 BGaN 缓冲器在漏极电流 (DC) 和射频 (RF) 特性。结果表明，BGaN 缓冲层可以有效地将二维电子气 (2DEG) 限制在沟道区域内，并显着提高器件的夹断速度。与作为参考的标准 GaN 缓冲 HEMT 相比，只有 1.5% B 组分的 BGaN 缓冲 HEMT 显着抑制了短沟道效应 (SCE)。亚阈值摆幅 (SS) 和漏极感应势垒降低 (DIBL) 分别降至 124 mV/dec 和 77 mV/V。所提出的 HEMT 的阈值电压约为 -3.61 eV，与参考 HEMT 相比正向偏移约 2.45 eV，这主要是由于 2DEG 密度的降低。此外，所提出的 HEMT 的f _T ) 和最大振荡频率 ( f _max ) 分别为 155 GHz 和 174 GHz。这比参考器件略低，这主要是由于较低的跨导和 2DEG 密度造成的。