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Polarity tuning of crystalline AlN films utilizing trace oxygen involved sputtering and post-high-temperature annealing
Applied Physics Express ( IF 2.3 ) Pub Date : 2021-07-14 , DOI: 10.35848/1882-0786/ac114d
Zhibin Liu 1, 2, 3 , Yanan Guo 1, 2, 3 , Jianchang Yan 1, 2, 3, 4 , Yiping Zeng 1, 2, 4, 5 , Junxi Wang 1, 2, 3 , Jinmin Li 1, 2, 3, 4
Affiliation  

The polarity tuning of AlN films via introducing a period of trace oxygen supply in the initial sputtering process was demonstrated. High-temperature annealing was further implemented to improve the crystal quality of AlN. High-quality pure N-polar AlN film could be achieved by sputtering with pure N2 gas. When trace oxygen was intentionally inputted in the sputtering chamber and its supply time surpassed 150s, the AlN surface polarity transmitted to pure Al-polar. After optimization, the full widths at half of maximum of X-ray rocking curves for (0002)/(10-12) reflection were improved to 41.3/132.5arcsec for N-polarity and 38.2/158.7arcsec for Al-polarity.



中文翻译:

利用微量氧对晶体 AlN 薄膜进行极性调节涉及溅射和高温后退火

展示了通过在初始溅射过程中引入一段时间的微量氧气供应来调节 AlN 薄膜的极性。进一步实施高温退火以提高AlN的晶体质量。通过用纯 N 2气体溅射可以获得高质量的纯 N 极性 AlN 薄膜。当在溅射室中有意输入微量氧气且其供应时间超过 150 秒时,AlN 表面极性转变为纯 Al 极性。优化后,(0002)/(10-12)反射X射线摇摆曲线半峰全宽提高到N极性41.3/132.5arcsec,Al极性38.2/158.7arcsec。

更新日期:2021-07-14
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