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Comparative microstructural studies using different methods: Effect of Cd-addition on crystallography, microstructural properties, and crystal imperfections of annealed nano-structural thin CdxZn1-xSe films
Physica B: Condensed Matter ( IF 2.8 ) Pub Date : 2021-07-14 , DOI: 10.1016/j.physb.2021.413267
Alaa Ahmed Akl 1, 2 , Ahmed Saeed Hassanien 3, 4
Affiliation  

Thermally evaporated zinc-cadmium selenide (CdxZn1-xSe) thin films with different Cd-concentration (0.0x1.0, at%) have been prepared. The deposition process of films was controlled where the vacuum was fixed at ≈10−5 Pa, the film thickness at 7500 Å, and the rate of deposition at ≈100 Å/s. These prepared films have been annealed under vacuum at 500⁰C for 2-hrs. X-ray diffraction, XRD study confirmed the crystallinity nature of annealed CdxZn1-xSe films with a face-centered cubic structure, which is transformed into a hexagonal structure with increasing the cadmium. Energy-dispersive X-ray analysis shows that there is good consistency between the detected and selected element ratios. Scherrer, Williamson-Hall, Size-Strain plot, and Halder-Wagner methods were used to examine the crystallite size and microstrain using XRD peak-broadening analysis. According to the Williamson-Hall method the crystallite size increased from 14.70 nm to 31.30 nm and microstrain decreased from 14.19×10−3 to 7.29×10−3. The Cd-addition leads to improving the film crystallinity and reducing the crystal imperfections.



中文翻译:

使用不同方法的微观结构比较研究:添加 Cd 对退火纳米结构 Cd x Zn 1-x Se 薄膜的晶体学、微观结构特性和晶体缺陷的影响

热蒸发锌-硒化镉(Cd的X的Zn 1-x Se)的薄膜具有不同的镉浓度(0.0X1.0, at%) 已准备好。控制薄膜的沉积过程,其中真空固定在≈10 -5  Pa 薄膜厚度为7500 Å,沉积速率为≈100 Å/s 这些制备的薄膜已在 500⁰C 下真空退火 2 小时X 射线衍射、XRD 研究证实了退火 Cd x Zn 1-x的结晶性质Se 膜具有面心立方结构,随着镉的增加转变为六方结构。能量色散X射线分析表明,检出元素比与选定元素比具有良好的一致性。Scherrer、Williamson-Hall、尺寸-应变图和 Halder-Wagner 方法用于使用 XRD 峰展宽分析来检查微晶尺寸和微应变。根据威廉姆森霍尔方法,微晶尺寸从 14 增加70 nm 至 31 . 30 nm 和微应变从14.19 × 10 -3降低到7.29 × 10 -3 Cd-添加导致改善薄膜结晶度并减少晶体缺陷。

更新日期:2021-07-20
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