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Room-Temperature Spin-Transport Properties in anIn0.5Ga0.5AsQuantum Dot Spin-Polarized Light-Emitting Diode
Physical Review Applied ( IF 4.6 ) Pub Date : 2021-07-14 , DOI: 10.1103/physrevapplied.16.014034
Kohei Etou , Satoshi Hiura , Soyoung Park , Kazuya Sakamoto , Junichi Takayama , Agus Subagyo , Kazuhisa Sueoka , Akihiro Murayama

An understanding of the spin-transport properties in semiconductor barriers is essential to improve the performance of spin-polarized light-emitting diodes (spin LEDs) for future optospintronics integration in information processing. Here, we report on the temperature and bias-voltage dependence of spin-transport properties in an In0.5Ga0.5As quantum dot (QD) spin LED using a combination of spin-dependent electroluminescence (EL) and time-resolved photoluminescence. The QD EL spin polarization increases with an increase in temperature above 125 K; this is attributed to the improved conversion efficiency from spin polarization of electrons to circular polarization of photons of the QDs. We find that both the electric field and temperature can enhance spin relaxation in the undoped GaAs barrier above 200 K. At 298 K, the QD EL spin polarization decreases beyond 2.5 V; this is attributed to the enhanced D’yakonov Perel’ spin relaxation in the undoped GaAs barrier caused by the increase in electron temperature. This study provides valuable insights into the spin-relaxation mechanism in the semiconductor barrier during the room-temperature operation of the QD spin LED.

中文翻译:

In0.5Ga0.5As 量子点自旋偏振发光二极管的室温自旋传输特性

了解半导体势垒中的自旋传输特性对于提高自旋偏振发光二极管(自旋 LED)的性能至关重要,以便未来在信息处理中集成光自旋电子学。在这里,我们报告了自旋传输特性的温度和偏置电压依赖性0.50.5作为使用自旋相关电致发光 (EL) 和时间分辨光致发光相结合的量子点 (QD) 自旋 LED。QD EL 自旋极化随着温度超过 125 K 的增加而增加;这归因于从电子的自旋极化到 QD 光子的圆极化的转换效率的提高。我们发现电场和温度都可以增强未掺杂的自旋弛豫作为势垒高于 200 K。在 298 K 时,QD EL 自旋极化降低超过 2.5 V;这归因于未掺杂的 D'yakonov Perel' 自旋弛豫增强作为电子温度升高引起的势垒。这项研究为 QD 自旋 LED 在室温操作期间半导体势垒中的自旋弛豫机制提供了宝贵的见解。
更新日期:2021-07-14
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