The variation of electrical resistivity can be an indicative of the crystallization path for metallic glass (MG). The primary phases of Cu₄₇Ti₃₄Zr₁₁Ni₈ and Ti₄₀Zr₂₅Cu₁₂Ni₃Be₂₀ MGs are Cu₃Ti and quasicrystal, respectively, which further influences change of electrical resistivity at the onset crystallization temperature (T_x1). The former shows a rapidly drop in the electrical resistivity curve along with apparent change in curve slope at T_x1, while the latter exhibits a long and continuous decrement of electrical resistivity from T_g to T_x2 without obvious change of curve slope at T_x1. The nanoscale quasicrystal with slower growth rate indicates that the icosahedral short-range orders might exist during sample preparation, which could easily overcome crystallization obstacle and transform into the quasicrystalline phase continuously, inducing the special change of the Ti₄₀Zr₂₅Cu₁₂Ni₃Be₂₀ MG. Meanwhile, the TCR of the crystalline/glass composite materials depends on the volume fraction of crystalline phase. When the volume fraction of crystalline phases is small, the TCR is still determined by the residual amorphous phase.

电阻率的变化可以指示金属玻璃 (MG) 的结晶路径。Cu ₄₇ Ti ₃₄ Zr ₁₁ Ni ₈和Ti ₄₀ Zr ₂₅ Cu ₁₂ Ni ₃ Be ₂₀ MGs的主相分别是Cu ₃ Ti和准晶，这进一步影响了开始结晶温度（T _x1）电阻率的变化。前者显示电阻率曲线迅速下降，同时在 T _x1处曲线斜率发生明显变化，而后者表现出电阻率从 T _g到 T _x2的长期连续下降，而 T _x1处的曲线斜率没有明显变化。生长速度较慢的纳米准晶表明，在样品制备过程中可能存在二十面体短程有序，很容易克服结晶障碍并不断转变为准晶相，引起Ti ₄₀ Zr ₂₅ Cu ₁₂ Ni ₃ Be的特殊变化₂₀MG。同时，晶体/玻璃复合材料的 TCR 取决于晶相的体积分数。当结晶相的体积分数较小时，TCR 仍由残留的非晶相决定。