Thulium doped gallium oxides (Tm-Ga₂O₃) films were deposited on Si substrates by the pulsed laser deposition method. Blue emissions (476nm and 460nm) can be observed by the naked eye from Tm-Ga₂O₃/Si light emitting diodes (LEDs). The threshold voltage of Tm-Ga₂O₃/Si LEDs is 6.3V, which is lower than that of Tm-GaN/Si devices. By combining our previously reported green emission from Er-Ga₂O₃ and red emission from Eu-Ga₂O₃, strong blue emission from Tm-Ga₂O₃ can realize the full-color LEDs with the single host of Ga₂O₃. These results open a pathway for integrating Ga₂O₃ based full-color LEDs with mainstream Si technology.

掺铥的氧化镓（Tm-Ga ₂ O ₃）薄膜通过脉冲激光沉积方法沉积在硅衬底上。Tm-Ga ₂ O ₃ /Si 发光二极管 (LED) 的蓝光发射（476 纳米和 460 纳米）可以通过肉眼观察到。Tm-Ga ₂ O ₃ /Si LED的阈值电压为 6.3V，低于 Tm-GaN/Si 器件的阈值电压。通过结合我们之前报道的 Er-Ga ₂ O _{3 的}绿光发射和 Eu-Ga ₂ O _{3 的}红光发射，Tm-Ga ₂ O _{3 的}强蓝光发射可以实现单主体 Ga ₂的全彩 LED○ ₃。这些结果为将基于Ga ₂ O ₃的全彩 LED 与主流硅技术集成开辟了道路。