In this study, (CuO/ZnO:Al) heterostructure thin films were grown on SnO₂:F-coated glass substrate by using the spin coating method. To investigate the effects of thickness on (CuO/ZnO:Al) heterostructure, ZnO:Al films were deposited in different thicknesses. The structural, optical, surface, and electrical properties of these heterostructure were examined in detail. The structural and optical properties of obtained heterostructure were examined by X-ray diffraction and UV–VIS spectrophotometer, respectively. The surface properties were analyzed by using atomic force microscope and scanning electron microscope. The electrical properties of these heterostructure were determined by current–voltage (I–V) characteristics at room temperature in dark. The electrical parameters (i.e., ideality factor and barrier height) were calculated by termoionic emission theory by using I–V measurement data. The change for thickness of n-type AZO layer in the (CuO/ZnO:Al/SnO2:F) heterostructure caused significant changes in its physical properties.

中文翻译：

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使用旋涂法研究 (CuO/ZnO:Al/SnO2:F) 异质结构薄膜的结构、光学和电学特性

在这项研究中，(CuO/ZnO:Al) 异质结构薄膜通过使用旋涂方法在 SnO ₂ :F 涂层的玻璃基板上生长。为了研究厚度对 (CuO/ZnO:Al) 异质结构的影响，沉积了不同厚度的 ZnO:Al 薄膜。详细检查了这些异质结构的结构、光学、表面和电学特性。所得异质结构的结构和光学性质分别通过 X 射线衍射和 UV-VIS 分光光度计进行检测。使用原子力显微镜和扫描电子显微镜分析表面性质。这些异质结构的电特性由电流-电压决定（I - V) 特性 常温避光。电参数（即理想因子和势垒高度）是通过使用I - V测量数据通过术语发射理论计算的。(CuO/ZnO:Al/SnO2:F) 异质结构中 n 型 AZO 层厚度的变化导致其物理性质发生显着变化。