In this paper, three-dimensional (3D) graphene/P-type indium phosphide (P-InP) nanopillar Schottky junction near-infrared photodetectors based on TCAD were built. The simulation results show that the Schottky barrier height of near infrared photodetector increases with the decrease of nanopillar size when the height of nanopillar is 10 μm. At 0 V bias voltage, when the wavelength of incident light is 808 nm, the responsivity increases gradually with the decrease of the size of the nanopillar, and the electric field intensity in the depletion region increases obviously. When the size of the nanopillar is fixed and the height of the nanopillar approaches the width of the depletion region, the responsivity of the detector reaches the maximum value. It shows the nanopillar structure can significantly improve the performance of the photodetectors.

本文构建了基于TCAD的三维（3D）石墨烯/P型磷化铟（P-InP）纳米柱肖特基结近红外光电探测器。仿真结果表明，当纳米柱高度为10 μm时，近红外光电探测器的肖特基势垒高度随着纳米柱尺寸的减小而增加。在0 V偏置电压下，当入射光波长为808 nm时，响应度随着纳米柱尺寸的减小而逐渐增大，耗尽区电场强度明显增大。当纳米柱的尺寸固定并且纳米柱的高度接近耗尽区的宽度时，探测器的响应度达到最大值。这表明纳米柱结构可以显着提高光电探测器的性能。