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Exploration of switching characteristics of 4H-SiC floating junction Schottky barrier diodes with stronger blocking voltage capability
Journal of Power Electronics ( IF 1.4 ) Pub Date : 2021-07-12 , DOI: 10.1007/s43236-021-00282-0
Yagong Nan 1, 2 , Genquan Han 1
Affiliation  

To promote applications in the field of power electronic devices, the switching characteristics of 4H-SiC Schottky barrier diodes with a floating junction structure were investigated. The rectangular pattern structure was employed as p+-buried layers of the floating junction due to its process convenience. In addition, some low-doped p-type layers were implanted in the drift region to improve the forward delayed conduction and to speed up the reverse recovery process. Crucial factors, such as the environment temperature, the doping concentrations of the drift region, and the dimensions of floating junction structure, which can have influences on the transient process of a device under certain bias conditions, were studied in detail by numerical simulations. Some results were quantitatively achieved by theoretical analysis. It was found that when retaining a breakdown voltage value of 4.49 kV, a low specific on-resistance of 5.87 mΩ·cm2, and a powerful capacity to carry current, when compared to the steeper reverse recovery of the conventional Schottky barrier diode, fast and soft switching characteristics with a reverse recovery time of 1.187 ns, and a value of 2.94 for the recovery softness factor, were obtained. The obtained results show that the technologic amelioration of the structure of devices can be advantageous in terms of the transient performance of the floating junction Schottky barrier diode and applications.



中文翻译:

具有更强阻断电压能力的4H-SiC浮动结肖特基势垒二极管的开关特性探索

为促进在电力电子器件领域的应用,研究了具有浮动结结构的4H-SiC肖特基势垒二极管的开关特性。由于其工艺方便,矩形图案结构被用作浮动结的p +埋层。此外,一些低掺杂的 p -型层被注入漂移区以改善正向延迟传导并加速反向恢复过程。通过数值模拟,详细研究了环境温度、漂移区掺杂浓度、浮结结构尺寸等在一定偏置条件下对器件瞬态过程产生影响的关键因素。通过理论分析定量地取得了一些结果。发现在保持4.49 kV的击穿电压值时,5.87 mΩ·cm 2的低比导通电阻,以及强大的载流能力,与传统肖特基势垒二极管更陡峭的反向恢复相比,获得了快速和软开关特性,反向恢复时间为 1.187 ns,恢复软度因子值为 2.94。 . 结果表明,器件结构的技术改进在浮动结肖特基势垒二极管的瞬态性能和应用方面具有优势。

更新日期:2021-07-12
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