This paper presents an accurate analytical model of surface potential and drain current for a long channel dual material gate (DMG) tunneling field-effect transistor (TFET) with the addition of nonlinear inversion charge developed at the channel/drain interface region, ambipolar characteristic, and quantum confinement. The model includes the effect of dual metal gate work function as it controls the threshold voltage without considering a fully depleted undoped channel region. The current model includes the effect of charge accumulation at the interface of two gates and an appropriate mathematical expression of nonlinear inversion charge developed at the interface of two gates has been derived from the two-dimensional (2D) Schrodinger wave equation incorporating quantum confinement. The model is effective to capture transfer characteristics at Sub 10 nm body thickness. A high I_ON/I_OFF ratio and less than 27 mV/decade subthreshold swing are achieved at 2 nm body thickness which is desirable for low power VLSI application. The proposed model has been compared and calculated by Sentaurus TCAD with fair accuracy and a good resemblance, including ambipolar characteristics at sub 10 nm body thickness has been achieved.

中文翻译：

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包含二维泊松和薛定谔波动方程的双栅极材料隧道场效应晶体管模型

本文提出了一种长沟道双材料栅极 (DMG) 隧道场效应晶体管 (TFET) 的表面电位和漏极电流的准确分析模型，其中添加了在沟道/漏极界面区域产生的非线性反转电荷，双极特性，和量子限制。该模型包括双金属栅极功函数的影响，因为它在不考虑完全耗尽的未掺杂沟道区域的情况下控制阈值电压。当前模型包括两个栅极界面处电荷积累的影响，并且从包含量子限制的二维 (2D) 薛定谔波动方程导出了在两个栅极界面处开发的非线性反转电荷的适当数学表达式。该模型可有效捕获低于 10 nm 主体厚度的传输特性。高I _ON / I _OFF比和小于 27 mV/decade 亚阈值摆幅在 2 nm 的主体厚度下实现，这是低功率 VLSI 应用的理想选择。所提出的模型已通过 Sentaurus TCAD 进行比较和计算，具有相当的准确性和良好的相似性，包括在体厚度低于 10 nm 时实现了双极特性。