Recently, resistive random access memory (RRAM) has become an important device for nonvolatile memory and neuromorphic computing. Herein, Cu/Hf_0.5Zr_0.5O₂ (HZO)/GeS/Pt and Cu/GeS/Pt devices are fabricated and the electrical characteristics are compared in detail. The experimental results show that the when one oxide layer HZO is inserted into the Cu/GeS/Pt structure, the double-layer memristor exhibits a high resistance ratio between the high-resistance and low-resistance states, and high reliability, relatively concentrated set and reset threshold voltage distribution, and a fast turn-on speed can be reached as low as 10 ns. Interestingly, the function of simulating biological synapses and plasticity, including spike-time-dependent plasticity (STDP) and paired pulse promotion (PPF), can be emulated in the memristor devices, which is of great significance to the development of artificial synapses.

中文翻译：

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用于神经启发计算的 Cu/HZO/GeS/Pt 忆阻器

最近，电阻随机存取存储器（RRAM）已成为非易失性存储器和神经形态计算的重要设备。在此，Cu/Hf _0.5 Zr _0.5 O ₂(HZO)/GeS/Pt 和 Cu/GeS/Pt 器件被制造出来，并详细比较了电气特性。实验结果表明，当一层氧化层HZO插入Cu/GeS/Pt结构时，双层忆阻器表现出高阻态和低阻态之间的高阻值比，高可靠性，相对集中的集和复位阈值电压分布，可达到低至 10 ns 的快速导通速度。有趣的是，模拟生物突触和可塑性的功能，包括尖峰时间依赖性可塑性（STDP）和成对脉冲促进（PPF），可以在忆阻器器件中进行模拟，这对人工突触的发展具有重要意义。