Magnetic 2D materials have emerged as a great interest in spintronics due to atomic thickness scaling, low energy switching, and ease in the manipulation of spins. This report demonstrates a facile, bottom-up, chemical vapor deposition approach for non-van der Waals (non-vdWs), 2D chromium (III) sulfide (Cr₂S₃) with c-axis orientation, out-of-plane magnetic anisotropy (easy axis), and ferrimagnetic ordering. Importantly, the anisotropic magnetic saturation and resistivity of 10.23 mΩ cm reveal a narrow bandgap ferrimagnetism in Cr₂S₃ (∆E_Activation ≈ 22 meV and E_g ≈ 40 meV). The prototype lateral spin-channel Al/Cr₂S₃/Al devices exhibit a negative magnetoresistance of ≈25% and ≈15% at 100 K (below Néel temperature) for few-layer (≈8 nm) and thin-film (≈50 nm) device structures, respectively, owing to itinerant ferrimagnetism of Cr₂S₃. The magnetic field-induced spin polaron formations are quite resilient and enhance the field-dependent carrier conduction, making it greatly useful for negative magnetoresistance operation. These prototype Al/Cr₂S₃/Al structures have demonstrated a low power (≈2 µW for 8 µm channel at 10 µA current) operation with a negative field-dependent resistance coefficient (r_M) of ≈−5 × 10⁻⁴ Oe⁻¹. The computed r_M magnitude is tenfold higher than the bulk Cr₂S₃. This study identifies the potential of non-vdW Cr₂S₃ toward new and robust 2D-based spintronic applications.

中文翻译：

---

探测具有增强负磁阻的亚铁磁半导体：二维硫化铬

由于原子厚度缩放、低能量切换和自旋操纵的简便性，磁性二维材料已成为自旋电子学的一大兴趣。本报告展示了一种简便的、自下而上的化学气相沉积方法，用于非范德华 (non-vdWs)、具有c轴取向、面外磁性的二维硫化铬 (III) (Cr ₂ S ₃ )各向异性（易轴）和亚铁磁性排序。重要的是，10.23 mΩ cm 的各向异性磁饱和和电阻率揭示了 Cr ₂ S _{3 中}的窄带隙亚铁磁性（Δ E_激活 ≈ 22 meV 和E _g  ≈ 40 meV）。原型横向自旋通道 Al/Cr ₂S ₃ /Al 器件在 100 K（低于 Néel 温度）下对于少层 (≈8 nm) 和薄膜 (≈50 nm) 器件结构分别表现出 ≈25% 和 ≈15% 的负磁阻，这是由于Cr ₂ S _{3 的}流动亚铁磁性。磁场诱导的自旋极化子形成具有很强的弹性并增强了与场相关的载流子传导，使其对负磁阻操作非常有用。这些原型 Al/Cr ₂ S ₃ /Al 结构已经证明了低功率（在 10 µA 电流下，对于 8 µm 通道≈2 µW）操作，具有≈−5 × 10 ^-4的负场相关电阻系数 ( r _M ) 大江^-1. 计算出的r _M幅度比块体 Cr ₂ S ₃高十倍。这项研究确定了非 vdW Cr ₂ S ₃对新的和强大的基于 2D 的自旋电子应用的潜力。