Identically-sized AlGaN/GaN HFETs were fabricated on three $\text{AlGaN/GaN}$ heterostructure with differing AlGaN barrier layer thicknesses of 15.5 nm, 19.3 nm and 24.7 nm. Based on polarization Coulomb field (PCF) scattering theory, additional polarization charges and electron mobility under the gate were calculated, and the relationship between AlGaN barrier layer thickness and $PCF$ scattering in $\text{AlGaN/GaN}$$HFETs$ was determined. For the $\text{AlGaN/GaN}$$HFETs$ with a thicker AlGaN barrier layer, when the same gate bias was applied to the gate, the inverse piezoelectric effect (IPE) of the barrier layer was weaker, resulting in fewer additional polarization charges. The $\text{AlGaN/GaN}$$HFETs$ with a thicker AlGaN barrier layer also possessed a higher 2DEG sheet charge density, diminishing the $PCF$ scattering intensity. It can be concluded that increasing the AlGaN barrier layer thickness reduces the IPE and raises the 2DEG sheet charge density, both of which decreases the PCF scattering intensity. The results of this study have guiding value toward the optimization of AlGaN/GaN HFETs materials and structures.

相同尺寸的 AlGaN/GaN HFET 是在三个 $\text{氮化镓/氮化镓}$具有 15.5 nm、19.3 nm 和 24.7 nm 不同 AlGaN 势垒层厚度的异质结构。基于极化库仑场（PCF）散射理论，计算了栅极下附加极化电荷和电子迁移率，并计算了AlGaN势垒层厚度与$磷CF$ 散落在 $\text{氮化镓/氮化镓}$$HF乙吨秒$被确定。为了$\text{氮化镓/氮化镓}$$HF乙吨秒$对于较厚的 AlGaN 势垒层，当对栅极施加相同的栅极偏压时，势垒层的逆压电效应 (IPE) 较弱，从而导致额外的极化电荷较少。这$\text{氮化镓/氮化镓}$$HF乙吨秒$ 具有更厚的 AlGaN 势垒层还具有更高的 2DEG 片电荷密度，从而减少了 $磷CF$散射强度。可以得出结论，增加AlGaN势垒层厚度会降低IPE并提高2DEG片电荷密度，这两者都降低了PCF散射强度。本研究结果对优化AlGaN/GaN HFETs材料和结构具有指导价值。