We fabricated a silver ion emitter based on the solid state electrolyte film of RbAg4I5 prepared by pulsed laser deposition. The RbAg4I5 target for PLD process was mechano-chemically synthesized by high-energy ball milling in Ar atmosphere using β-AgI and RbI as raw materials. The ion-conducting properties of RbAg4I5 were studied by alternating current (AC) impedance spectroscopy and the ionic conductivity at room temperature was estimated 0.21 S/m. The structure, morphology, and elemental composition of the RbAg4I5 film were investigated. The Ag+ ion-conducting property of the prepared superioni-conductor film was exploited for ion–beam generation. The temperature and accelerating voltage dependences of the ion current were studied. Few nA current was obtained at the temperature of 196 °C and the accelerating voltage of 10 kV.

中文翻译：

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脉冲激光沉积制备的RbAg4I5固体电解质薄膜的结构、电导率和离子发射特性

我们基于通过脉冲激光沉积制备的 RbAg4I5 固态电解质膜制造了银离子发射器。用于 PLD 工艺的 RbAg4I5 靶材是使用 β-AgI 和 RbI 作为原料，在 Ar 气氛中通过高能球磨机械化学合成的。通过交流 (AC) 阻抗谱研究了 RbAg4I5 的离子导电特性，室温下的离子电导率估计为 0.21 S/m。研究了 RbAg4I5 薄膜的结构、形态和元素组成。所制备的超离子导体薄膜的 Ag+ 离子导电特性被用于离子束生成。研究了离子电流的温度和加速电压依赖性。在 196 °C 的温度和 10 kV 的加速电压下获得了很少的 nA 电流。