Abstract. Cadmium selenide (n-CdSe) thin films were grown on a silicon substrate with a polished surface and applied to the Schottky type device structure. The n-CdSe thin films produced depended on various deposition times at 70°C by the use of the chemical bath deposition technique. XRD results show that the fabricated thin films consist of both cubic and hexagonal crystal systems. The morphology of CdSe was formed in nanograins and nanowire structures with respect to deposition times of 6 and 10 h, respectively. In addition to structural analysis of CdSe thin films, CdSe nanowires were used as an interfacial layer in a metal–semiconductor device to investigate its effects on the electrical and photosensitive characteristics of the device. As well as under forward bias current–voltage (I − V) conditions, the space charge limited current conduction behaviors were identified at low voltages. The results showed that the film produced at 10 h has a better performance compared to that produced at 6 h in terms of increased electric current.

中文翻译：

---

通过化学浴沉积制备的硒化镉纳米线的结构特性对 p-Si/CdSe 异质结的电学和光敏特性

摘要。硒化镉 (n-CdSe) 薄膜生长在具有抛光表面的硅衬底上，并应用于肖特基型器件结构。通过使用化学浴沉积技术，在 70°C 下产生的 n-CdSe 薄膜取决于不同的沉积时间。XRD 结果表明制备的薄膜由立方晶系和六方晶系组成。在沉积时间分别为 6 小时和 10 小时的情况下，CdSe 的形态形成为纳米颗粒和纳米线结构。除了 CdSe 薄膜的结构分析外，CdSe 纳米线还用作金属-半导体器件中的界面层，以研究其对器件电学和光敏特性的影响。以及在正向偏置电流-电压 (I - V) 条件下，在低电压下确定了空间电荷限制电流传导行为。结果表明，在增加电流方面，10 h 制备的薄膜与 6 h 制备的薄膜相比具有更好的性能。