This letter presents a compact output combining network for a packaged integrated asymmetric Doherty power amplifier (DPA) by taking advantage of device drain source capacitance, Cds and package parasitic components. A new method is introduced to/of/for absorbing part of the peaking amplifier’s $C_{\mathrm{ ds}}$ into the impedance transformer, thus extending the $C$ – $L$ – $C$ -based “ $C_{\mathrm{ ds}}$ -absorption” technique to two-way asymmetric DPAs. Based on the proposed combining network, a two-stage laterally-diffused metal-oxide semiconductor (LDMOS) integrated asymmetric DPA was designed and fabricated at 2.6 GHz. The fabricated RF integrated circuit (RFIC) is mounted in a quad flat no-lead (QFN) package. Under a single-tone continuous-wave (CW) signal at 2.6 GHz, the DPA achieves a peak power of 46 dBm, a linear gain of 31.7 dB, and a 48% power-added efficiency (PAE) at 8-dB output power back-off (OBO). The DPA also demonstrates good linearizability by meeting the 5G spectrum mask and achieving a digital predistortion (DPD) corrected adjacent channel power ratio (ACPR) better than −51.5 dBc for 160-MHz long-term evolution (LTE).

中文翻译：

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用于 5G 基站应用的 2.6GHz 集成 LDMOS Doherty 功率放大器

这封信通过利用器件漏源电容、Cds 和封装寄生元件的优势，为封装的集成非对称 Doherty 功率放大器 (DPA) 提供了一个紧凑的输出组合网络。一种新方法被引入/吸收/吸收峰值放大器的一部分 $C_{\mathrm{ ds}}$ 进入阻抗变压器，从而扩展 $C$ —— $L$ —— $C$ -基于 ” $C_{\mathrm{ ds}}$ -absorption”技术用于双向非对称 DPA。基于所提出的组合网络，设计并制造了一种两级横向扩散金属氧化物半导体 (LDMOS) 集成非对称 DPA，频率为 2.6 GHz。制造的射频集成电路 (RFIC) 安装在四方扁平无引线 (QFN) 封装中。在 2.6 GHz 的单音连续波 (CW) 信号下，DPA 实现了 46 dBm 的峰值功率、31.7 dB 的线性增益以及 8-dB 输出功率下的 48% 功率附加效率 (PAE)退避（OBO）。DPA 还通过满足 5G 频谱模板并实现优于 -51.5 dBc 的数字预失真 (DPD) 校正相邻信道功率比 (ACPR) 来展示良好的线性化能力，适用于 160 MHz 长期演进 (LTE)。