We report the competing effects of disorder pinning and thermal roughening on ferroelectric domain walls as a function of temperature in epitaxial $\mathrm{Pb}{\mathrm{Zr}}_{0.2}{\mathrm{Ti}}_{0.8}{\mathrm{O}}_3$ thin films deposited on (001) $\mathrm{SrTi}{\mathrm{O}}_3$ substrates buffered by three types of correlated oxide electrodes, ${\mathrm{La}}_{0.67}{\mathrm{Sr}}_{0.33}\mathrm{Mn}{\mathrm{O}}_3$, $\mathrm{LaNi}{\mathrm{O}}_3$, and $\mathrm{SrIr}{\mathrm{O}}_3$. Piezoresponse force microscopy studies show that the 50-nm $\mathrm{Pb}{\mathrm{Zr}}_{0.2}{\mathrm{Ti}}_{0.8}{\mathrm{O}}_3$ films are uniformly polarized in the as-grown states, with the patterned domain structures persisting above 700 °C. For all three types of films, the domain wall roughness is dominated by two-dimensional (2D) random bond disorder at room temperature, and transitions to 1D thermal roughening upon heating. The roughness exponent $\zeta$ increases progressively from 0.3 to 0.5 within a temperature window that depends on the bottom conducting oxide type, from which we extracted the distribution of disorder pinning energy. We discuss the possible origins of the disorder pinning and the effect of the correlated oxide electrodes on the energy landscape of DW motion.

中文翻译：

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相关氧化物电极对外延PbZr0.2Ti0.8O3薄膜铁电畴壁无序钉扎和热粗糙化的影响

我们报告了作为外延温度函数的无序钉扎和热粗糙化对铁电畴壁的竞争影响 $铅{锆}_{0.2}{钛}_{0.8}{\mathrm{哦}}_3$ 沉积在 (001) 上的薄膜 $\mathrm{钛酸锶}{\mathrm{哦}}_3$ 由三种相关氧化物电极缓冲的基板， ${拉}_{0.67}{锶}_{0.33}锰{\mathrm{哦}}_3$, $\mathrm{拉镍}{\mathrm{哦}}_3$， 和 $锶{\mathrm{哦}}_3$. 压电响应力显微镜研究表明，50-nm$铅{锆}_{0.2}{钛}_{0.8}{\mathrm{哦}}_3$薄膜在生长状态下均匀极化，图案域结构持续高于 700°C。对于所有三种类型的薄膜，畴壁粗糙度在室温下由二维 (2D) 随机键无序支配，并在加热时转变为一维热粗糙化。粗糙度指数$\zeta$在取决于底部导电氧化物类型的温度窗口内从 0.3 逐渐增加到 0.5，我们从中提取了无序钉扎能的分布。我们讨论了无序钉扎的可能起源以及相关氧化物电极对 DW 运动能量景观的影响。