In this work, a new series of non-rare earth doped Ba₂Y₅B₅O₁₇: x at.% Sb³⁺ (BYBO: x at.% Sb) blue light phosphors were synthesized by high temperature solid state method. The structural analysis supported that Sb³⁺ can occupy four different kinds of lattice sites in BYBO crystal structure. By selecting the excitation conditions for Sb³⁺ ions at different lattice sites, a wide range of emission wavelength tuning exceeding 100 nm can be achieved. Our experimental results demonstrated that, by using 370 nm near-ultraviolet (n-UV) light to excite the Sb³⁺ ions at the Y4 (Sb1) lattice occupancy in BYBO: 3 at.% Sb, the blue light emission can be realized. White light emitting diode (wLED) was fabricated by combining 370 nm n-UV chip with purchased (Sr, Ba)₂SiO₄: Eu, (Sr, Ca)AlSiN₃: Eu and synthesized BYBO: 3 at.% Sb phosphor. From the measured electroluminescence (EL) spectrum of the packaged wLED, the correlated color temperature (CCT) and color rendering index (CRI) were calculated to be 3816 K and 91.25, respectively. These results indicated that BYBO: 3 at.% Sb can serve as excellent blue phosphor for preparing n-UV excited wLED with low CCT and high CRI value.

在这项工作中，通过高温固相法合成了一系列新的非稀土掺杂的 Ba ₂ Y ₅ B ₅ O ₁₇ : x at.% Sb ³⁺ (BYBO: x at.% Sb) 蓝光荧光粉。结构分析支持Sb ³⁺在BYBO 晶体结构中可以占据四种不同的晶格位点。通过选择不同晶格位置的Sb ³⁺离子的激发条件，可以实现超过 100 nm 的宽范围发射波长调谐。我们的实验结果表明，通过使用 370 nm 近紫外 (n-UV) 光激发 Sb ³⁺BYBO 中 Y4 (Sb1) 晶格占有率的离子：3 at.% Sb，可以实现蓝光发射。通过将 370 nm n-UV 芯片与购买的 (Sr, Ba) ₂ SiO ₄ : Eu、(Sr, Ca)AlSiN ₃ : Eu 和合成的 BYBO: 3 at.% Sb 荧光粉相结合来制造白光发光二极管 (wLED) 。根据测量的封装 wLED 的电致发光 (EL) 光谱，计算出相关色温 (CCT) 和显色指数 (CRI) 分别为 3816 K 和 91.25。这些结果表明，BYBO: 3 at.% Sb 可以作为优异的蓝色荧光粉，用于制备具有低 CCT 和高 CRI 值的 n-UV 激发 wLED。