The hot pressing process was employed to produce dense ultrahigh-temperature ZrB₂–15 vol.% SiC–5 vol.% WC ceramics. Refractory (Zr, W)C and WB phases emerged in hot pressing at 2050°C and 30 MPa with a holding time of 15 min. The hot pressing process was peculiar in that a (Zr, W)B₂ solid solution formed at the zirconium boride grain boundaries. Annealing in vacuum at 1600°C decreased the amount of oxygen in the ceramics from 0.3 to 0.1 wt.% through interaction of B₂O₃, SiO₂, and ZrO₂ with tungsten carbide. The ZrB₂–15 vol.% SiC–5 vol.% WC ceramics had 505 ± 60 MPa strength at room temperature and 802 ± 94 MPa strength at 1800°C. The high strength at 1800°C was reached through transcrystalline fracture of zirconium boride grains. High-temperature oxidation resulted in scale consisting of three layers: borosilicate glass as the upper layer, zirconium oxide with other oxide phases (WO₃ and SiO₂) as the middle layer, and the base material depleted of boron and silicon as the lower layer. At an oxidation temperature of 1500°C and a holding time of 50 h, the scale was 85 μm thick, including a SiO₂–B₂O₃ layer 64 μm thick and a layer of ZrO₂ + SiO₂ + Me_xO_y and base material depleted of boron and silicon. At an oxidation temperature of 1600°C and a holding time of 2 h, the scale was 84 μm thick, including a SiO₂–B₂O₃ layer 10 μm thick and a layer of ZrO₂ + SiO₂ + Me_xO_y and base material depleted of boron and silicon. The dense scale developed on the material allowed 70% of its initial strength to be retained after oxidation at 1500°C with a holding time of 50 h and 50% strength after oxidation at 1600°C for 2 h, which was higher than for the base ZrB₂–15 vol.% SiC–5 vol.% ceramics.

采用热压工艺生产致密的超高温 ZrB ₂ –15 vol.% SiC–5 vol.% WC 陶瓷。耐火 (Zr, W)C 和 WB 相在 2050°C 和 30 MPa 的热压中出现，保温时间为 15 分钟。热压工艺的特点在于在硼化锆晶界处形成了(Zr，W)B ₂固溶体。通过 B ₂ O ₃、SiO ₂和 ZrO ₂与碳化钨的相互作用，在 1600°C 的真空中退火使陶瓷中的氧含量从 0.3 重量％减少到 0.1 重量％。ZrB ₂–15 vol.% SiC–5 vol.% WC 陶瓷在室温下具有 505 ± 60 MPa 的强度，在 1800°C 下具有 802 ± 94 MPa 的强度。通过硼化锆晶粒的跨晶断裂达到1800℃的高强度。高温氧化产生由三层组成的水垢：上层硼硅玻璃，中层氧化锆和其他氧化物相（WO ₃和 SiO ₂），下层是贫硼和硅的基材. 在 1500°C 的氧化温度和 50 h 的保温时间下，氧化皮厚度为 85 μm，包括64 μm 厚的 SiO ₂ –B ₂ O ₃层和一层 ZrO ₂ + SiO ₂ + Me _xO _y和基本材料耗尽了硼和硅。在 1600°C 的氧化温度和 2 h 的保温时间下，氧化皮厚度为 84 μm，包括10 μm 厚的 SiO ₂ –B ₂ O ₃层和一层 ZrO ₂ + SiO ₂ + Me _x O _y以及不含硼和硅的基材。材料上形成的致密氧化皮使其在 1500°C 氧化保持 50 小时后仍能保持 70% 的初始强度，在 1600°C 氧化 2 小时后强度保持在 50%，高于基 ZrB ₂ –15 vol.% SiC–5 vol.% 陶瓷。