Electronic transport in a semiconductor is key for the development of more efficient devices. In particular, the electronic transport parameters carrier lifetime and mobility are of paramount importance for the modeling, characterization, and development of new designs for solar cells and optoelectronic devices. Herein, time-resolved photoluminescence mapping under low injection and wide-field illumination conditions is used to measure the carrier lifetime and analyze the lateral charge carrier transport in Cu(In,Ga)Se₂ absorbers grown at different temperatures, on different substrates, and subject to different postdeposition treatments (PDT) with light or heavy alkalis. To estimate the carrier mobility, numerical simulations of carrier diffusion transport to areas of increased recombination (defects) are used, similarly as observed experimentally. Mobilities are found in the range of 10–50 cm² V⁻¹ s⁻¹, and effective minority carrier lifetime between 100 and 800 ns resulting in carrier diffusion lengths of 2–9 μm depending on the sample. Finally, the factors limiting carrier mobility and the implications of carrier diffusion on the measured carrier lifetimes are discussed.

中文翻译：

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通过时间分辨光致发光映射研究 Cu(In,Ga)Se2 中的横向载流子输运

半导体中的电子传输是开发更高效设备的关键。特别是，电子传输参数载流子寿命和迁移率对于太阳能电池和光电器件的新设计的建模、表征和开发至关重要。在此，低注入和宽场照明条件下的时间分辨光致发光映射用于测量载流子寿命并分析 Cu(In,Ga)Se _{2 中}的横向电荷载流子传输吸收剂在不同温度、不同基材上生长，并经过不同的轻碱或重碱后沉积处理 (PDT)。为了估计载流子迁移率，使用了载流子扩散传输到复合增加（缺陷）区域的数值模拟，与实验观察类似。迁移率在 10–50 cm ²  V ^-1  s ^-1范围内，有效少数载流子寿命在 100 到 800 ns 之间，导致载流子扩散长度为 2–9 μm，具体取决于样品。最后，讨论了限制载流子迁移率的因素以及载流子扩散对测量的载流子寿命的影响。