In this work, we performed the comparative study of plasma parameters, steady-state gas phase compositions and Si reactive-ion etching kinetics in CF₄ + O₂ + Ar, CHF₃ + O₂ + Ar and C₄F₈ + O₂ + Ar gas mixtures with variable O₂/Ar component ratios. It was found that the substitution of Ar for O₂ (a) did not disturb the well-known correlation between the polymerizing ability and the F/C ratio in the original fluorocarbon molecule; (b) causes similar changes in electrons- and ions-related plasma parameters (electron temperature, plasma density, ion bombardment energy); and (c) always suppresses densities of polymerizing radicals and reduces the polymer film thickness. At the same time, the specific effects of oxygen on F atom kinetics result in sufficient differences in their densities and fluxes. It was shown that the dominant etching mechanism for Si in all three gas systems is the chemical etching pathway provided by F atoms (since the contribution of physical sputtering is below 10%) while measured etching rates do not follow the behavior of F atom flux. The phenomenological analysis of heterogeneous process kinetics allowed one to suggest factors influencing the effective reaction probability. These are either the transport of F atoms through thick polymer film (in the case of high-polymerizing C₄F₈ + O₂ + Ar plasma) or heterogeneous reactions with a participation of oxygen atoms under the condition of thin or non-continuous polymer film (in the case of low-polymerizing CF₄ + O₂ + Ar plasma).

在这项工作中，我们对 CF ₄  + O ₂  + Ar、CHF ₃  + O ₂  + Ar 和 C ₄ F ₈  + O _{2 中}的等离子体参数、稳态气相组成和 Si 反应离子蚀刻动力学进行了比较研究 + 具有可变 O ₂ /Ar 组分比的Ar 气体混合物。发现用 Ar 代替 O ₂(a) 没有扰乱聚合能力与原始碳氟化合物分子中 F/C 比之间众所周知的相关性；(b) 引起与电子和离子相关的等离子体参数（电子温度、等离子体密度、离子轰击能量）的类似变化；(c)总是抑制聚合自由基的密度并降低聚合物膜厚度。同时，氧对 F 原子动力学的特定影响导致它们的密度和通量有足够的差异。结果表明，在所有三种气体系统中，Si 的主要蚀刻机制是 F 原子提供的化学蚀刻途径（因为物理溅射的贡献低于 10%），而测量的蚀刻速率不遵循 F 原子通量的行为。异质过程动力学的现象学分析使人们能够提出影响有效反应概率的因素。这些要么是 F 原子通过厚聚合物膜的传输（在高聚合 C 的情况下）₄ F ₈  + O ₂  + Ar 等离子体）或在薄或非连续聚合物膜条件下有氧原子参与的多相反应（在低聚合性 CF ₄  + O ₂  + Ar 等离子体的情况下）。