This work investigates how the thickness of the polysilicon layer and temperatures during contact sintering influence the properties of SiO_x/polysilicon passivated contacts. The n⁺ polysilicon layers deposited by low-pressure chemical vapor deposition (LPCVD) on top of a thin wet chemically grown interface oxide layer providing chemical and field-effect passivation on n-type monocrystalline silicon wafers are investigated. Three different polysilicon layer thicknesses of 50, 100, and 150 nm are considered in this work. A high level of passivation with implied V_oc values above 735 mV and J₀₁ below 5 fA cm⁻² is obtained for symmetric lifetime test samples. These samples are used to investigate the interaction of the silver paste with the polysilicon layer at different fast firing peak temperatures. Reduction in polysilicon layer thickness leads to an increase in contact resistivity as well as in J_0met. Excellent J_0met values of the order of J₀₁ with contact resistivity values below 2 mΩ cm² are obtained for samples with polysilicon layers of 100 and 150 nm thickness.

中文翻译：

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多晶硅厚度对丝网印刷银浆金属化氧化硅/多晶硅钝化触点性能的影响

这项工作研究了多晶硅层的厚度和接触烧结过程中的温度如何影响 SiO _x /多晶硅钝化触点的性能。研究了通过低压化学气相沉积 (LPCVD) 在薄湿化学生长界面氧化物层顶部沉积的 n ⁺多晶硅层，在 n 型单晶硅晶片上提供化学和场效应钝化。在这项工作中考虑了 50、100 和 150 nm 三种不同的多晶硅层厚度。高钝化水平，隐含的V _oc值高于 735 mV，J ₀₁低于 5 fA cm ^-2是针对对称寿命测试样品获得的。这些样品用于研究银浆与多晶硅层在不同快速烧制峰值温度下的相互作用。多晶硅层厚度的减少导致接触电阻率以及J _{0met 的增加}。对于具有100和150nm厚度的多晶硅层的样品，获得了J ₀₁数量级的优异J _0met值，并且接触电阻率值低于2 mΩ cm ²。