Herein, a high-performance room-temperature extended-wavelength InAs-based barrier-type photodetector that operates in the 1.5–3.5 μm wavelength range is presented. The experimental results show that the uncooled photodetector exhibits a peak responsivity of 1.47 A W⁻¹ at 3 μm and a peak detectivity as high as 1.6 × 10¹⁰ cm Hz^1/2 W⁻¹ at zero bias, which is 3–10 times higher than that of available commercial InAs photodetectors. The external quantum efficiency at the peak responsivity is ≈63%. The nature of the detector's extended spectral response is investigated using numerical computation analyses, which indicate that such improvement is primarily contributed by the InAsSbP window layer.

中文翻译：

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高性能室温扩展波长 InAs 基中波红外光电探测器

在此，提出了一种在 1.5-3.5 μm 波长范围内工作的高性能室温扩展波长 InAs 势垒型光电探测器。实验结果表明，非制冷光电探测器在 3 μm 处的峰值响应率为 1.47 A W ^-1，在零偏压下的峰值探测率高达 1.6 × 10 ¹⁰  cm Hz ^1/2  W ^-1，高出 3-10 倍比可用的商业 InAs 光电探测器。峰值响应度下的外量子效率约为 63%。使用数值计算分析研究了探测器扩展光谱响应的性质，这表明这种改进主要由 InAsSbP 窗口层贡献。