Three topical materials systems are discussed from the point of view of point defect characterization with positron annihilation spectroscopy. The family of III-nitride semiconductors and device structures made thereof poses interesting challenges for data interpretation due to preferential localization and annihilation with various elements. Semiconducting oxides with relatively complex crystal lattice structures further highlight the need for combining systematically designed experiments with state-of-the-art theoretical calculations. High-entropy alloys generate another challenge due to the large number of randomly distributed elements, combining chemical disorder with structural order.

中文翻译：

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使用正电子湮没光谱法识别多元素化合物和合金中的点缺陷：挑战与机遇

从正电子湮没光谱的点缺陷表征的角度讨论了三种局部材料系统。由于各种元素的优先定位和湮灭，III族氮化物半导体及其制成的器件结构对数据解释提出了有趣的挑战。具有相对复杂晶格结构的半导体氧化物进一步突出了将系统设计的实验与最先进的理论计算相结合的必要性。由于大量随机分布的元素，将化学无序与结构有序相结合，高熵合金产生了另一个挑战。