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Solid state synthesis and properties of new semiconducted CuTa2-xSbxO6 solid solution
Solid State Sciences ( IF 3.5 ) Pub Date : 2021-07-07 , DOI: 10.1016/j.solidstatesciences.2021.106686
Grażyna Dąbrowska 1 , Elżbieta Filipek 1
Affiliation  

A new substitutional solid solution of the general formula CuTa2-xSbxO6 and with a limited range of homogeneity (0 < x ≤ 0.5) was found to form in the binary CuTa2O6–CuSb2O6 system. Maximal replacement of Ta5+ by Sb5+ ions reaches at least 25 mol%. The new phase was synthesized by the conventional solid-state reaction using the starting mixtures of reactants containing both CuO, Ta2O5 and α-Sb2O4 oxides as well as CuTa2O6 and CuSb2O6 compounds. The obtained solid solution was characterized by XRD, DTA, IR and UV–Vis-DRS methods. The effects of the degree of Sb5+ ion incorporation in the crystal lattice of CuTa2O6 replacing Ta5+ on the unit cell volume, thermal stability, IR spectra and the energy gap of CuTa2-xSbxO6 in the range 0 < x ≤ 0.5 were determined. The new solid solution is a semiconductor and the energy gap of CuTa2-xSbxO6 decrease from 2.76 to 2.64 eV for 0.10 = x ≤ 0.50.



中文翻译:

新型半导体CuTa 2-x Sb x O 6固溶体的固态合成及性能

发现在二元CuTa 2 O 6 -CuSb 2 O 6系统中形成了通式为CuTa 2-x Sb x O 6且具有有限范围的均质性(0 < x ≤ 0.5)的新置换固溶体。Sb 5+离子对Ta 5+的最大置换达到至少25 mol%。新相是通过常规的固态反应合成的,起始混合物包含 CuO、Ta 2 O 5和 α-Sb 2 O 4氧化物以及 CuTa 2 O 6和 CuSb 2O 6化合物。所得固溶体通过XRD、DTA、IR和UV-Vis-DRS方法进行表征。Sb的程度的效果5+离子掺入CUTA的晶格2 ö 6取代的Ta 5+晶胞体积上,热稳定性,红外光谱和CUTA的能隙2-X Sb的X Ó 6在范围 0 < x ≤ 0.5 被确定。新的固溶体是半导体,当0.10 = x ≤ 0.50 时,CuTa 2-x Sb x O 6的能隙从 2.76 eV 减小到 2.64 eV。

更新日期:2021-07-13
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