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Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
National Science Review ( IF 20.6 ) Pub Date : 2021-07-01 , DOI: 10.1093/nsr/nwab122
Qiang Li 1 , Jun-Feng Wang 1 , Fei-Fei Yan 1 , Ji-Yang Zhou 1 , Han-Feng Wang 1 , He Liu 1 , Li-Ping Guo 2 , Xiong Zhou 2 , Adam Gali 3 , Zheng-Hao Liu 1 , Zu-Qing Wang 1 , Kai Sun 1 , Guo-Ping Guo 1 , Jian-Shun Tang 1 , Hao Li 4 , Li-Xing You 4 , Jin-Shi Xu 1 , Chuan-Feng Li 1 , Guang-Can Guo 1
Affiliation  

Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room temperature single-spin manipulation of colour centres in SiC has been demonstrated, the typically detected contrast is less than 2$\%$, and the photon count rate is also low. Here, we present the coherent manipulation of single divacancy spins in 4H-SiC with a high readout contrast ($-30\%$) and a high photon count rate (150 kilo counts per second) under ambient conditions, which are competitive with the nitrogen-vacancy (NV) centres in diamond. Coupling between a single defect spin and a nearby nuclear spin is also observed. We further provide a theoretical explanation for the high readout contrast by analysing the defect levels and decay paths. Since the high readout contrast is of utmost importance in many applications of quantum technologies, this work might open a new territory for SiC-based quantum devices with many advanced properties of the host material.

中文翻译:

具有高读数对比度的碳化硅中单自旋量子位的室温相干操作

具有成熟的晶圆级制造和微/纳米加工技术的碳化硅(SiC)中的自旋缺陷最近引起了相当大的关注。尽管已经证明了 SiC 中色心的室温单自旋操纵,但通常检测到的对比度小于 2$\%$,并且光子计数率也很低。在这里,我们展示了 4H-SiC 中单双位自旋的相干操作,在环境条件下具有高读出对比度($-30\%$)和高光子计数率(每秒 150 千克计数),这与金刚石中的氮空位 (NV) 中心。还观察到单个缺陷自旋和附近的核自旋之间的耦合。我们通过分析缺陷水平和衰减路径进一步为高读出对比度提供了理论解释。
更新日期:2021-07-01
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