This paper presents an inductor less wideband low noise amplifier (LNA) with an area of 0.3mm², using 130nm SiGe BiCMOS technology targeted for 5G WiGig wireless application. A gm boosting amplifier used at the intermediate node of the cascode topology to reduce the noise contribution of the common base (CB) transistor for the first time in SiGe HBT technology. Mathematical analysis shows that the proposed high frequency gm boosting technique on the CB transistor can be optimally tuned for either low NF or high linearity. Furthermore, the circuit incorporates variable capacitors for multimode capability, ensuring optimal performance in all four WiGig channels. Post layout EM simulation of the circuit shows that the resultant LNA has a maximum gain of 21.08dB with the −3 dB frequency over 56GHz to 67.3GHz. The proposed LNA exhibits a minimum noise figure of 4.3dB and shows high linearity with an input referred IP3 of −2.7dB. The designed when operated using supply voltage of 1.2V consumes a total dc power of 8.9mW.

中文翻译：

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用于 WiGig 应用的 130 nm SiGe HBT 中的线性高频 gm 提升宽带 LNA，最小 NF 为 4.3 dB

本文提出了一种面积为 0.3 的无电感宽带低噪声放大器 (LNA)mm ² , 使用 130面向 5G WiGig 无线应用的纳米 SiGe BiCMOS 技术。一种G米升压放大器用于级联拓扑的中间节点，在 SiGe HBT 技术中首次降低了共基极 (CB) 晶体管的噪声贡献。数学分析表明，所提出的高频G米CB 晶体管上的升压技术可以针对低 NF 或高线性度进行优化调整。此外，该电路结合了可变电容器以实现多模功能，确保所有四个 WiGig 通道的最佳性能。电路的布局后 EM 仿真表明，所得 LNA 的最大增益为 21.08分贝与-3 dB 频率超过 56GHz 至 67.3千兆赫。建议的 LNA 的最小噪声系数为 4.3dB 并显示高线性度与输入参考一世磷3的-2.7D b。使用 1.2 的电源电压操作时设计的V 消耗的总直流功率为 8.9兆瓦。