V_gmax Hot-Carrier-Injection (HCI) degradation in Multi-finger p-Laterally-Diffused Metal-Oxide-Semiconductor Field-Effect-Transistors (LDMOSFET) had been investigated by Multi-Region Direct-Current-Current-Voltage (MR-DCIV) characterization method-probing the interface state distribution along the channel, accumulation and (Shallow Trench Isolation) STI-drift region. The method feasibility was verified by device simulation and stress experiment. The enhanced interface state generation in the channel and accumulation region was clearly revealed in multi-finger layout device. This layout dependent degradation was associated with self-heating effect and temperature accelerated V_gmax HCI stress.

多指 p 横向扩散金属氧化物半导体场效应晶体管 (LDMOSFET) 中的V _gmax热载流子注入 (HCI) 退化已通过多区域直流电流电压 (MR- DCIV) 表征方法——探测沿沟道、积累和（浅沟槽隔离）STI 漂移区域的界面态分布。通过器件仿真和应力实验验证了该方法的可行性。在多指布局器件中清楚地揭示了沟道和累积区域中增强的界面态生成。这种依赖于布局的退化与自热效应和温度加速 V _gmax HCI 应力有关。