The topological Hall effect (THE) as a powerful probe for the experimental observation of topological spin textures, such as magnetic skyrmions, has been observed in a wide variety of distinct material systems. However, limited experimental observations have been reported for antiferromagnetic (AFM) materials. Here, the THE signals in the AFM state were observed in compensated ferrimagnetic thin films interfaced with heavy metals at the magnetization compensation temperature (T_M). Ferrimagnetic CoTb thin films grown on Pt thin films were used in the experiments. The CoTb films exhibited a magnetization compensation point at which the moments of Co and Tb sublattices canceled each other, giving rise to the AFM state. The temperature (T)-dependent Hall measurements showed anomalous Hall effect (AHE) and THE responses at T ≠ T_M but pure THE responses at T = T_M. Control measurements and analyses suggest that the THE responses are associated with interfacial Dzyaloshinskii-Moriya interaction (DMI) rather than the overlapping of different AHE signals in the structure. This work presents the first-ever observation of interfacial DMI-induced THE in AFM metal trilayered systems and demonstrates a new approach for electrical reading of chiral spin textures in AFM thin film-based heterostructures.

拓扑霍尔效应 (THE) 作为拓扑自旋纹理（例如磁性斯格明子）的实验观察的强大探针，已在各种不同的材料系统中观察到。然而，关于反铁磁 (AFM) 材料的实验观察报告有限。在此，在与磁化补偿温度（重金属接口补偿亚铁磁薄膜，观察到在AFM状态的信号Ť_中号）。在实验中使用生长在 Pt 薄膜上的亚铁磁性 CoTb 薄膜。CoTb 薄膜表现出磁化补偿点，在该点 Co 和 Tb 亚晶格的矩相互抵消，从而产生 AFM 状态。温度（T) 相关的霍尔测量显示异常霍尔效应 (AHE) 和T ≠ T _{M 处的}THE 响应，但T = T _M处的纯 THE 响应。对照测量和分析表明，THE 响应与界面 Dzyaloshinskii-Moriya 相互作用 (DMI) 相关，而不是结构中不同 AHE 信号的重叠。这项工作首次在 AFM 金属三层系统中观察到界面 DMI 诱导的 THE，并展示了一种在基于 AFM 薄膜的异质结构中电读取手性自旋纹理的新方法。