While single-junction solar cells may be capable of attaining AM1.5 theoretical efficiency of 33.16%, infinite multijunction (MJ, Tandem) solar cells will have a limiting efficiency of 86.8%. Tandem solar cells based on crystalline silicon (c-Si) bottom cells are therefore attracting great interest. An interesting candidate for the top cell absorber is represented by copper zinc tin sulfide Cu₂ZnSnS₄ (CZTS). In this work, the CZTS/Si tandem solar cell is optimized by using indium oxide / Cadmium sulfide (In₂O₃/CdS) hybrid buffer. This present work reports CZTS/Si solar cell with an open-circuit voltage V_OC of over 0.942 V and a J_SC of 34.7 mA cm⁻² by adding In₂O₃ layer in the CZTS top cell. The added In₂O₃ layer has a thickness of 0.022 µm and is n-doped with a concentration of 1e20 cm⁻³. Compared with a CZTS/Si in which the hybrid buffer is of CdS, the efficiency is increased from 13.5% to 28.4%. These hybrid In₂O₃/CdS buffers provide a promising way to reduce the V_OC deficit and further boost the efficiency of CZTS/Si solar cells.

中文翻译：

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在 CZTS 顶部电池中使用 In2O3 层提高 CZTS/Si 串联太阳能电池的效率

虽然单结太阳能电池可能能够达到 33.16% 的 AM1.5 理论效率，但无限多结（MJ，串联）太阳能电池将具有 86.8% 的极限效率。因此，基于晶体硅 (c-Si) 底部电池的串联太阳能电池引起了极大的兴趣。顶部电池吸收剂的一个有趣候选者是铜锌硫化锡 Cu ₂ ZnSnS ₄ (CZTS)。在这项工作中，CZTS/Si 串联太阳能电池通过使用氧化铟/硫化镉 (In ₂ O ₃ /CdS) 混合缓冲液进行了优化。此目前的工作报告CZTS / Si太阳能电池中与开路电压V _OC超过0.942的V和Ĵ _SC的34.7毫安厘米⁻ ² 通过在CZTS 顶部电池中添加 In ₂ O ₃层。添加的In ₂ O ₃层具有0.022μm的厚度并且以1e20 cm ^-3的浓度进行n掺杂。与混合缓冲液为 CdS 的 CZTS/Si 相比，效率从 13.5% 提高到 28.4%。这些混合 In ₂ O ₃ /CdS 缓冲液提供了一种有前景的方法来减少V _OC不足并进一步提高 CZTS/Si 太阳能电池的效率。