In this paper, we have investigated the impact of temperature (T) and drain bias voltage (V_ds) on gate induced drain leakage (GIDL) in SiGe Source/Drain heterojunction silicon-nanotube junctionless field effect transistor (S/D Si-NT JLFET). We developed a temperature dependent model for surface potential, electric field E_Z, L-BTBT induced I_GIDL and full drain current I_ds using 2-D Poison equation with suitable boundary conditions. We have also examined impact of temperature (activation energy) and drain bias voltage (electric field) on L-BTBT induced I_GIDL. It is found that the increase in drain bias voltage causes 31.1% rise in I_GIDL and elevation in temperature has 29.4% increase in I_GIDL. Furthermore, we have examined impact of temperature on transconductance (g_m) and output conductance (g_d). The results demonstrated that temperature and drain bias voltage has significant impact on SiGe S/D NTJLFET, however, it is considerably less than the NTJLFET.

在本文中，我们研究了温度 ( T ) 和漏极偏置电压 ( V _ds ) 对 SiGe 源极/漏极异质结硅纳米管无结场效应晶体管 (S/D Si-NT) 中栅极感应漏极泄漏 (GIDL) 的影响JLFET）。我们使用具有合适边界条件的 2-D Poison 方程开发了表面电位、电场E _Z、L-BTBT 感应I _GIDL和全漏电流I _ds的温度相关模型。我们还研究了温度（活化能）和漏极偏置电压（电场）对 L-BTBT 诱导的I _{GIDL 的影响}. 发现漏极偏置电压的增加导致I _GIDL增加31.1% ，温度升高导致I _GIDL增加29.4% 。此外，我们还研究了温度对跨导 ( g _m ) 和输出电导 ( g _d ) 的影响。结果表明，温度和漏极偏置电压对 SiGe S/D NTJLFET 有显着影响，但远小于 NTJLFET。