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Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
Microelectronics Reliability ( IF 1.6 ) Pub Date : 2021-07-02 , DOI: 10.1016/j.microrel.2021.114199
ZHan Gao 1 , Matteo Meneghini 1 , Kathia Harrouche 2 , Riad Kabouche 2 , Francesca Chiocchetta 1 , Etienne Okada 2 , Fabiana Rampazzo 1 , Carlo De Santi 1 , Farid Medjdoub 2 , Gaudenzio Meneghesso 1 , Enrico Zanoni 1
Affiliation  

Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode remains almost unchanged in all tested devices, and consists in an increase of gate leakage, accompanied by a positive shift of threshold voltage. In off-state, electroluminescence images detect the presence of localized leakage paths which may act as preferential paths for electron trapping. Degradation does not depend on dissipated power and is preliminary attributed to hot-electron trapping, enhanced by electric fields.



中文翻译:

超薄势垒、110 nm 栅极 AlN/GaN HEMT 的短期可靠性和稳健性

110 nm AlN/GaN HEMT 的短期可靠性和稳健性已通过对具有不同栅漏距离 L GD 的器件进行关态、半导态和导通态阶跃应力测试来评估。虽然击穿电压和临界电压几乎与 L GD成线性关系,但所有测试器件的故障模式几乎保持不变,包括栅极泄漏增加,伴随着阈值电压的正偏移。在关闭状态下,电致发光图像检测局部泄漏路径的存在,这些路径可以作为电子俘获的优先路径。退化不依赖于耗散功率,并且初步归因于由电场增强的热电子俘获。

更新日期:2021-07-02
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