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Flip-Chip Bonded Evanescently Coupled III-V-on-Si Single-Mode Laser with Slotted Feedback Structure
IEEE Photonics Technology Letters ( IF 2.6 ) Pub Date : 2021-06-18 , DOI: 10.1109/lpt.2021.3090565
Tao Shi , Hailing Wang , Ranzhe Meng , Linhai Xu , Tiancai Wang , Wanhua Zheng

A specially designed InP semiconductor optical amplifier (SOA) is flip-chip bonded to the silicon-on-insulator photonic circuit, in which only horizontal alignment is involved reducing the complexity of integration and light is evanescently coupled to the silicon waveguide from the SOA. Two groups of slots are applied as two high-order Distributed Bragg Reflectors (DBR) to select a single mode in the silicon waveguide. Compared with the low-order grating, the slot structure with a feature size in the micrometer level can be fabricated by standard photolithography at a low cost. A single-mode continuous operation with a side mode suppression ratio of more than 30 dB is obtained and the measured output power is 2.5 mW with a threshold current of 116 mA at 20°C. The integrated III-V-on-Si single-mode laser with slotted feedback structure provides a low-cost solution for light sources on silicon.

中文翻译:

具有开槽反馈结构的倒装芯片键合瞬逝耦合 III-V-on-Si 单模激光器

一个专门设计的 InP 半导体光放大器 (SOA) 倒装芯片键合到绝缘体上硅光子电路,其中仅涉及水平对齐,降低了集成的复杂性,并且光从 SOA 瞬逝耦合到硅波导。两组缝隙用作两个高阶分布式布拉格反射器 (DBR) 以在硅波导中选择单模。与低阶光栅相比,具有微米级特征尺寸的缝隙结构可以通过标准光刻技术以低成本制造。获得了边模抑制比大于 30 dB 的单模连续运行,测得的输出功率为 2.5 mW,20°C 时的阈值电流为 116 mA。
更新日期:2021-07-02
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