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A Novel Method to Reduce Specific Contact Resistivity of TiSix/n+-Si Contacts by Employing an In-Situ Steam Generation Oxidation Prior to Ti Silicidation
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2021-05-19 , DOI: 10.1109/led.2021.3081701
Dan Zhang , Chao Zhao , Jing Xu , Jianfeng Gao , Jinbiao Liu , Yaodong Liu , Menghua Li , Xuebing Zhou , Xianglie Sun , Yongliang Li , Junfeng Li , Wenwu Wang , Dapeng Chen , Tianchun Ye , Jun Luo

Due to extremely tight Contacted Poly Pitch (CPP) in sub-10 nm nodes, specific contact resistivity ( $\rho _{{\text {c}}}$ ) has become the main concern for further improvement of transistor performance. Both the reduction of Schottky barrier heights (SBHs) and the enhancement of surface dopant concentration ( $\text{N}_{{\text {s}}}$ ) are considered as the most effective approaches to reduce $\rho _{{\text {c}}}$ . In this work, a novel in-situ steam generation (ISSG) oxidation process prior to Ti silicidation is proposed to achieve an enhanced $\text{N}_{{\text {s}}}$ value, thanks to the segregation of P at the surface of $\text{n}^{+}$ -Si. Refined Transmission Line Model (RTLM) structures were fabricated to extract the $\rho _{{\text {c}}}$ accurately and reliably. The dopant redistribution of P was characterized by both secondary ion mass spectrometry (SIMS) and spreading resistance probe (SRP). Compared to control samples, the $\rho _{{\text {c}}}$ value for samples with 4 nm ISSG SiO 2 is reduced from ${2.91}\times {10}^{-{8}}$ to ${1.90}\times {10}^{-{8}} \Omega $ -cm 2 , and this is attributed to the enhancement of $\text{N}_{{\text {s}}}$ value.

中文翻译:

通过在钛硅化之前采用原位蒸汽发生氧化来降低 TiSi x /n + -Si 触点的特定接触电阻率的新方法

由于亚 10 nm 节点中极其紧密的接触多晶节距 (CPP),特定接触电阻率 ( $\rho _{{\text {c}}}$ ) 已成为进一步提高晶体管性能的主要关注点。肖特基势垒高度(SBHs)的降低和表面掺杂浓度的提高( $\text{N}_{{\text {s}}}$ ) 被认为是最有效的减少 $\rho _{{\text {c}}}$ . 在这部作品中,一部小说原位 建议在 Ti 硅化之前采用蒸汽发生 (ISSG) 氧化工艺以实现增强 $\text{N}_{{\text {s}}}$ 值,由于 P 在表面的偏析 $\text{n}^{+}$ -Si。制造精炼传输线模型 (RTLM) 结构以提取 $\rho _{{\text {c}}}$ 准确可靠。P 的掺杂剂重新分布通过二次离子质谱法 (SIMS) 和扩散电阻探针 (SRP) 进行表征。与对照样品相比, $\rho _{{\text {c}}}$ 4 nm ISSG SiO 2样品的值 从 ${2.91}\times {10}^{-{8}}$ ${1.90}\times {10}^{-{8}} \Omega $ -cm 2 ,这归因于 $\text{N}_{{\text {s}}}$ 价值。
更新日期:2021-07-02
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