In this letter, we report a quasi-vertical GaN junction barrier Schottky diode on low-cost sapphire substrate. With the high quality GaN epitaxy and selective-area p-islands formed via Magnesium ion implantation at the anode region, reverse leakage in level of 10 ⁻⁷ A/cm ² was achieved, as well as a high on/off current ratio of 10 ¹⁰ and a high breakdown voltage of 838 V. Meanwhile, advantageous characteristics as expected in vertical GaN Schottky barrier diode were realized, including a low turn-on voltage of 0.5 V and fast switching performance under 400 V/10 A operation condition. Along with the improved heat dissipation via substrate thinning and packaging techniques, the diode retains a relatively low thermal resistance, enabling high current rectification level over 60 A, power efficiency up to 98.7 %, while maintaining low case temperatures.

中文翻译：

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具有快速开关特性的高压准垂直 GaN 结势垒肖特基二极管

在这封信中，我们报告了一种基于低成本蓝宝石衬底的准垂直 GaN 结势垒肖特基二极管。通过在阳极区通过镁离子注入形成的高质量 GaN 外延和选择性区域 p 岛，实现了 10 ^-7 A/cm ²水平的反向泄漏，以及 10 的高开/关电流比 ¹⁰和838 V的高击穿电压。同时，实现了垂直GaN肖特基势垒二极管所预期的优势特性，包括0.5 V的低导通电压和400 V/10 A工作条件下的快速开关性能。除了通过基板减薄和封装技术改善散热外，该二极管还保持相对较低的热阻，可实现超过 60 A 的高电流整流水平，功率效率高达 98.7%，同时保持较低的外壳温度。