In a ${p}$ -channel field-effect-transistor ( ${p}$ -FET) bridge HEMT device recently realized on a commercial ${p}$ -GaN/AlGaN/GaN-on-Si power HEMT epi-wafer, it is revealed that the device’s reverse-conduction turn-on voltage ( ${V}_{\text {RT}}$ ) can be effectively decoupled from the forward threshold voltage ( ${V}_{\text {TH}}$ ) of Schottky-type ${p}$ -GaN gate HEMTs. Unlike the conventional Schottky-type ${p}$ -GaN gate HEMTs, of which ${V}_{\text {RT}}$ is closely linked to ${V}_{\text {TH}}$ , the ${p}$ -FET-bridge HEMT enables separate designs of ${V}_{\text {RT}}$ and $V_{\text {TH}}$ so that low-loss reverse conduction and high threshold voltage can be simultaneously realized. In addition, ${V}_{\text {RT}}$ can be further reduced by engineering the AlGaN barrier layer, which will also benefit a lower channel sheet resistance without lowering ${V}_{\text {TH}}$ .

中文翻译：

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肖特基型 p-GaN 栅极 HEMT 中正向和反向开启阈值电压的去耦

在一个 ${p}$ -沟道场效应晶体管（ ${p}$ -FET) 桥式 HEMT 器件最近在商业上实现 ${p}$ -GaN/AlGaN/GaN-on-Si 功率 HEMT 外延片，显示器件的反向导通电压 ( ${V}_{\text {RT}}$ ) 可以有效地从正向阈值电压 ( ${V}_{\text {TH}}$ ) 肖特基型 ${p}$ -GaN 栅极 HEMT。不同于传统的肖特基型 ${p}$ -GaN 栅极 HEMT，其中 ${V}_{\text {RT}}$ 与 ${V}_{\text {TH}}$ ， 这 ${p}$ -FET 桥 HEMT 可实现单独的设计 ${V}_{\text {RT}}$ 和 $V_{\text {TH}}$ 从而可以同时实现低损耗反向导通和高阈值电压。此外， ${V}_{\text {RT}}$ 可以通过设计 AlGaN 势垒层进一步降低，这也将有利于降低沟道薄层电阻，而不会降低 ${V}_{\text {TH}}$ .