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Observation of Divacancy Formation for ZnON Thin-Film Transistors With Excessive N Content
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2021-05-06 , DOI: 10.1109/led.2021.3077908
Jun Tae Jang , Hyoung-Do Kim , Changwook Kim , Sung-Jin Choi , Jong-Ho Bae , Dong Myong Kim , Hyun-Suk Kim , Dae Hwan Kim

This study proposes a model of mobility and negative bias stress stability degradation mechanism of zinc oxynitride (ZnON) thin-film transistors (TFTs) with various anion compositions. The subgap density of states (DOS) for ZnON TFTs were extracted using monochromatic photonic capacitance–voltage measurement. The extracted subgap DOS indicated an additional nitrogen-related subgap peak was observed in ZnON TFTs with an excessive nitrogen condition, which might originate from a nitrogen divacancy formation. Furthermore, the shifted threshold voltage components after the bias stress test were quantitatively divided as subgap DOS and interface trapping.

中文翻译:

观察N含量过高的ZnON薄膜晶体管的双空位形成

本研究提出了具有各种阴离子成分的氮氧化锌 (ZnON) 薄膜晶体管 (TFT) 的迁移率和负偏置应力稳定性退化机制模型。使用单色光子电容-电压测量提取 ZnON TFT 的子带隙密度 (DOS)。提取的子间隙 DOS 表明在具有过量氮条件的 ZnON TFT 中观察到额外的与氮相关的子间隙峰,这可能源于氮双空位的形成。此外,偏置应力测试后偏移的阈值电压分量被定量划分为子间隙 DOS 和界面捕获。
更新日期:2021-07-02
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