An amorphous-metal-oxide-semiconductor (AOS) thin-film planar-type spike-timing-dependent-plasticity (STDP) synapse device has been developed. The AOS is a non-rare material and can be easily deposited, and therefore it is inexpensive. On the other hand, the STDP is promising as a learning principle for neuromorphic systems. In this study, first, an AOS thin-film planar-type STDP synapse device is actually fabricated. Next, spiking pulses are applied to the synapse device as pre-signals and post-signals. Finally, STDP characteristics, namely, long-term-depression (LTD) and long-term-potentiation (LTP), are observed, which seem to be due to charge injection into the underlayer insulator film.

中文翻译：

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非晶金属氧化物半导体薄膜平面型尖峰定时相关可塑性突触装置

已开发出一种非晶金属氧化物半导体 (AOS) 薄膜平面型尖峰时序相关可塑性 (STDP) 突触装置。AOS 是一种非稀有材料，易于沉积，因此价格低廉。另一方面，STDP 有望作为神经形态系统的学习原理。在这项研究中，首先，实际制造了 AOS 薄膜平面型 STDP 突触装置。接下来，尖峰脉冲作为前信号和后信号施加到突触装置。最后，观察到 STDP 特性，即长期抑制 (LTD) 和长期增强 (LTP)，这似乎是由于电荷注入到下层绝缘膜中所致。